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PolarHV TM HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFN 64N50P
V DSS = 500 V
I D25 = 61 A
R DS(on) ≤ 85 m ?
t rr ≤ 200 ns
Symbol
Test Conditions
Maximum Ratings
miniBLOC, SOT-227 B (IXFN)
V DSS
V DGR
V GSS
V GSM
I D25
I DM
I AR
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 1 M ?
Continuous
Transient
T C = 25 ° C
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
500
500
± 30
± 40
61
150
64
V
V
V
V
A
A
A
E153432
G
S
D
S
E AR
E AS
T C = 25 ° C
T C = 25 ° C
80
2.5
mJ
J
G = Gate
S = Source
D = Drain
dv/dt
P D
T J
T JM
T stg
T L
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS
T J ≤ 150 ° C, R G = 4 ?
T C = 25 ° C
1.6 mm (0.062 in.) from case for 10 s
20
700
-55 ... +150
150
-55 ... +150
300
V/ns
W
° C
° C
° C
° C
Either Source terminal S can be used as the
Source terminal or the Kelvin Source (gate
return) terminal.
Features
V ISOL
50/60 Hz
I ISOL ≤ 1 mA
t = 1 min
t=1s
2500
3000
V~
V~
? International standard package
? Encapsulating epoxy meets
UL 94 V-0, flammability classification
Fast recovery diode
M d
Mounting torque
Terminal connection torque (M4)
1.5/13
1.5/13
Nm/lb.in.
Nm/lb.in.
? miniBLOC with Aluminium nitride
isolation
l
Weight
30
g
l
Unclamped Inductive Switching (UIS)
rated
Symbol Test Conditions
(T J = 25 ° C unless otherwise specified)
Characteristic Values
Min. Typ. Max.
l
Low package inductance
- easy to drive and to protect
BV DSS
V GS = 0 V, I D = 250 μ A
500
V
V GS(th)
V DS = V GS , I D = 8 mA
3.0
5.5
V
Advantages
I GSS
V GS = ± 30 V DC , V DS = 0
± 200
nA
l
l
Easy to mount
Space savings
I DSS
V DS = V DSS
V GS = 0 V
T J = 125 ° C
25
1000
μ A
μ A
l
High power density
R DS(on)
V GS = 10 V, I D = 32 A, Note 1
85
m ?
? 2006 IXYS All rights reserved
DS99349E(03/06)
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